Rob Crooke, VP & GM of Intel’s Non-Volatile Memory (NVM) Solutions Group was last up in the company’s day long Investor Meeting today in Santa Clara.
Though last, he had the most newsworthy announcement about the company’s future memory intentions.
Intel announced it is back in the memory business – 3D NAND-Flash that is (mass production in-house is conditional though).
Crookes’ revelation ends any rumination on Intel-Micron Flash Technologies 3D Flash development – it also includes SK Hynix when the device goes into production 2Q 2015. Evidently those who have been nice have early sample devices according to sources.
The specifics:
- 4G hole array 32 layers deep | (216 x 216)(Array) x 25(Layers) x 2(MLC) = 256 Gbits
- 1TB in 2 mm package
- SSDs: 10TB and up planned
- Production 2H 2015 – IMFT (Lehi, Utah facility mentioned) & SK Hynix
- Intel can also produce internally
- Replacement of HDD with SSD in all PC and Mobile devices
Crooke allowed that the devices will not use Intel’s cutting edge 14nm technology but a slightly relaxed geometry – Micron is on record at 16nm geometries for 3D NAND. The openly known fact that prevaricating about Flash Geometries may hold sway – a hefty dose of caveat emptor is recommended.
The announcement coincides with reports that Intel and Micron are involved in a project with EMC2-DSSD – an effort to produce the first NAND-Flash In-Memory Database appliance. The proffered memory type may be a custom type expressly tailored for the application and may be produced in-house by Intel – more on this as roll-out time nears.
